Description
Nov 1, 2013 November 2013. Thermal Characteristics. Symbol. Parameter. FQD10N20LTM . Unit. R JC. Thermal Resistance, Junction to Case, Max. 2.48. Aug 9, 2014 Manufacturing Site. Weight*. UOM. Unit Type. FQD10N20LTM . FQD10N20LTM . TO-252-3 (NiLFAlBW). INTERNAL SUZHOU. 0.291830 g. Each. Aug 8, 2014 Assembly. Location. Package. Weight(g). MSL. Rating. FQD10N20LTM . TO-252- 3. (NiLFAlBW). SUZHOU. INTERNAL. SUZHOU. 0.2918300. 1.
Part Number | FQD10N20LTM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 200V 7.6A DPAK |
Series | QFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 830pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 51W (Tc) |
Rds On (Max) @ Id, Vgs | 360 mOhm @ 3.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252, (D-Pak) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
FQD10N20LTM
ONSEMICON
55100
0.73
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FQD10N20LTM
ON/ST
5000
1.535
INSO (INCREDIBLE SOLUTION) HK LIMITED
FQD10N20LTM
ON/CMD
220360
2.34
Cinty Int'l (HK) Industry Co., Limited
FQD10N20LTM
ON/SANYO
2000
3.145
Yingxinyuan INT'L (Group) Limited
FQD10N20LTM
ONSEM
11825
3.95
CIS Ltd (CHECK IC SOLUTION LIMITED)