Part Number | FQB9N50TM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 500V 9A D2PAK |
Series | QFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1450pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.13W (Ta), 147W (Tc) |
Rds On (Max) @ Id, Vgs | 730 mOhm @ 4.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
FQB9N50TM
ONSEMICON
746
0.74
HK HEQING ELECTRONICS LIMITED
FQB9N50TM
ON/ST
16000
1.88
Finestock Electronics HK Limited
FQB9N50TM
ON/CMD
18650
3.02
Fairstock HK Limited
FQB9N50TM
ON/SANYO
10000
4.16
Hong Kong Capital Industrial Co.,Ltd
FQB9N50TM
ONSEM
80566
5.3
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED