Part Number | FQB8N90CTM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 900V 6.3A D2PAK |
Series | QFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 6.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2080pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 171W (Tc) |
Rds On (Max) @ Id, Vgs | 1.9 Ohm @ 3.15A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
FQB8N90CTM
ONSEMICON
7200
1.81
SSD ELECTRONICS CO., LIMITED
FQB8N90CTM
ON/ST
8500
2.51
SUMMER TECH(HK) LIMITED
FQB8N90CTM
ON/CMD
65951
3.21
ATLANTIC TECHNOLOGY LIMITED
FQB8N90CTM
ON/SANYO
50000
3.91
Yingxinyuan INT'L (Group) Limited
FQB8N90CTM
ONSEM
545
4.61
WIN AND WIN ELECTRONICS LIMITED