Part Number | FQB7N65CTM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 650V 7A D2PAK |
Series | QFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1245pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 173W (Tc) |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 3.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
FQB7N65CTM
ONSEMICON
3261
1.37
HK HEQING ELECTRONICS LIMITED
FQB7N65CTM
ON/ST
6115
1.915
Ysx Tech Co., Limited
FQB7N65CTM
ON/CMD
9245
2.46
Gallop Great Holdings (Hong Kong) Limited
FQB7N65CTM
ON/SANYO
6243
3.005
Yingxinyuan INT'L (Group) Limited
FQB7N65CTM
ONSEM
423
3.55
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED