Part Number | FQB6N15TM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 150V 6.4A D2PAK |
Series | QFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25°C | 6.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.75W (Ta), 63W (Tc) |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 3.2A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
FQB6N15TM
ONSEMICON
20000
1.04
Yingxinyuan INT'L (Group) Limited
FQB6N15TM
ON/ST
40000
2.3
Far East Electronics Technology Limited
FQB6N15TM
ON/CMD
1000
3.56
MY Group (Asia) Limited
FQB6N15
ON/SANYO
20000
4.82
Yingxinyuan INT'L (Group) Limited
FQB6N15
ONSEM
40000
6.08
Far East Electronics Technology Limited