Part Number | FQB65N06TM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 60V 65A D2PAK |
Series | QFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2410pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.75W (Ta), 150W (Tc) |
Rds On (Max) @ Id, Vgs | 16 mOhm @ 32.5A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
FQB65N06TM
ONSEMICON
1254
0.72
HK HEQING ELECTRONICS LIMITED
FQB65N06TM
ON/ST
30000
1.605
Bonase Electronics (HK) Co., Limited
FQB65N06TM
ON/CMD
16000
2.49
Finestock Electronics HK Limited
FQB65N06TM
ON/SANYO
5000
3.375
Ande Electronics Co., Limited
FQB65N06TM
ONSEM
2254
4.26
CIS Ltd (CHECK IC SOLUTION LIMITED)