Part Number | FQB5N20LTM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 200V 4.5A D2PAK |
Series | QFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 325pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.13W (Ta), 52W (Tc) |
Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 2.25A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
FQB5N20LTM
ONSEMICON
20000
0.13
Finestock Electronics HK Limited
FQB5N20LTM
ON/ST
20000
1.2
Yingxinyuan INT'L (Group) Limited
FQB5N20LTM
ON/CMD
1000
2.27
MY Group (Asia) Limited
FQB5N20LTM
ON/SANYO
18000
3.34
MASSTOCK ELECTRONICS LIMITED
FQB5N20L
ONSEM
20000
4.41
Yingxinyuan INT'L (Group) Limited