Part Number | FQB55N06TM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 60V 55A D2PAK |
Series | QFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1690pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.75W (Ta), 133W (Tc) |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 27.5A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
FQB55N06TM
ONSEMICON
4879
1.49
HK HEQING ELECTRONICS LIMITED
FQB55N06TM
ON/ST
6369
2.61
Cicotex Electronics (HK) Limited
FQB55N06TM
ON/CMD
3070
3.73
KDH SEMICONDUCTOR CO., LIMITED
FQB55N06TM
ON/SANYO
1406
4.85
Finestock Electronics HK Limited
FQB55N06TM
ONSEM
5804
5.97
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED