Part Number | FQB4N20TM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 200V 3.6A D2PAK |
Series | QFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 220pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.13W (Ta), 45W (Tc) |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 1.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
FQB4N20TM
ONSEMICON
2046
1.76
Yingxinyuan INT'L (Group) Limited
FQB4N20TM
ON/ST
8213
2.64
MY Group (Asia) Limited
FQB4N20TM
ON/CMD
7592
3.52
Fairstock HK Limited
FQB4N20TM
ON/SANYO
7178
4.4
Finestock Electronics HK Limited
FQB4N20
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9685
5.28
Yingxinyuan INT'L (Group) Limited