Part Number | FQB3N25TM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 250V 2.8A D2PAK |
Series | QFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 170pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.13W (Ta), 45W (Tc) |
Rds On (Max) @ Id, Vgs | 2.2 Ohm @ 1.4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
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FQB3N25TM
ONSEMICON
1000
0.34
MY Group (Asia) Limited
FQB3N25
ON/ST
5000
1.2575
G Trader Limited
FQB3N25
ON/CMD
5876
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Analog Technology Limited
FQB3N25
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20000
3.0925
C & I Semiconductors Co., Limited
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21850
4.01
Cicotex Electronics (HK) Limited