Part Number | FQB34N20TM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 200V 31A D2PAK |
Series | QFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 78nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3100pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 3.13W (Ta), 180W (Tc) |
Rds On (Max) @ Id, Vgs | 75 mOhm @ 15.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
FQB34N20TM
ONSEMICON
250
1.7
HONGKONG YUETAIJIA ELECTRONIC LIMITED
FQB34N20TM
ON/ST
752
3.1
WIDEY INTERNATIONAL LIMITED
FQB34N20TM
ON/CMD
23712
4.5
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
FQB34N20TM
ON/SANYO
12082
5.9
NEW IDEAS INDUSTRIAL CO., LIMITED
FQB34N20TM
ONSEM
21
7.3
Cicotex Electronics (HK) Limited