Part Number | FQB33N10TM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 100V 33A D2PAK |
Series | QFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 51nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 25V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 3.75W (Ta), 127W (Tc) |
Rds On (Max) @ Id, Vgs | 52 mOhm @ 16.5A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
FQB33N10TM
ONSEMICON
1231
1.56
HK HEQING ELECTRONICS LIMITED
FQB33N10TM
ON/ST
2306
2.565
SUMMER TECH(HK) LIMITED
FQB33N10TM
ON/CMD
871
3.57
Redstar Electronic Limited
FQB33N10TM
ON/SANYO
1659
4.575
Yingxinyuan INT'L (Group) Limited
FQB33N10TM
ONSEM
4272
5.58
WIN AND WIN ELECTRONICS LIMITED