Part Number | FQB1N60TM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 1.2A D2PAK |
Series | QFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 1.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.13W (Ta), 40W (Tc) |
Rds On (Max) @ Id, Vgs | 11.5 Ohm @ 600mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
FQB1N60TM
ONSEMICON
6394
0.78
MY Group (Asia) Limited
FQB1N60TM
ON/ST
4606
1.64
Finestock Electronics HK Limited
FQB1N60TM
ON/CMD
9906
2.5
Cicotex Electronics (HK) Limited
FQB1N60TM
ON/SANYO
5960
3.36
ATLANTIC TECHNOLOGY LIMITED
FQB1N60TM
ONSEM
6068
4.22
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED