Part Number | FQB13N10LTM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 100V 12.8A D2PAK |
Series | QFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 12.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.75W (Ta), 65W (Tc) |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 6.4A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
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FQB13N10LTM
ONSEMICON
16000
1.77
Finestock Electronics HK Limited
FQB13N10LTM
ON/ST
5000
2.615
Bostock HK Limited
FQB13N10LTM
ON/CMD
1000
3.46
MY Group (Asia) Limited
FQB13N10LTM
ON/SANYO
1692
4.305
Cicotex Electronics (HK) Limited
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20000
5.15
Yingxinyuan INT'L (Group) Limited