Part Number | FQB13N06LTM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 60V 13.6A D2PAK |
Series | QFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 13.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6.4nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.75W (Ta), 45W (Tc) |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 6.8A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
FQB13N06LTM
ONSEMICON
1000
0.16
MY Group (Asia) Limited
FQB13N06LTM
ON/ST
1300
1.015
Cicotex Electronics (HK) Limited
FQB13N06LTM
ON/CMD
16000
1.87
Finestock Electronics HK Limited
FQB13N06LTM
ON/SANYO
18650
2.725
Fairstock HK Limited
FQB13N06LTM
ONSEM
20000
3.58
Yingxinyuan INT'L (Group) Limited