Part Number | FQB11P06TM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET P-CH 60V 11.4A D2PAK |
Series | QFET |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 11.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 25V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 3.13W (Ta), 53W (Tc) |
Rds On (Max) @ Id, Vgs | 175 mOhm @ 5.7A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
FQB11P06TM
ONSEMICON
2759
0.32
Finestock Electronics HK Limited
FQB11P06TM
ON/ST
352
1.1825
Shenzhen Qianlan TECHNOLOGY CO .,LTD
FQB11P06TM
ON/CMD
8743
2.045
ATLANTIC TECHNOLOGY LIMITED
FQB11P06TM
ON/SANYO
1713
2.9075
RX ELECTRONICS LIMITED
FQB11P06TM
ONSEM
2408
3.77
Yingxinyuan INT'L (Group) Limited