Part Number | FQB10N20LTM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 200V 10A D2PAK |
Series | QFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 830pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.13W (Ta), 87W (Tc) |
Rds On (Max) @ Id, Vgs | 360 mOhm @ 5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
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FQB10N20LTM
ONSEMICON
5114
0.67
Fairstock HK Limited
FQB10N20LTM
ON/ST
4116
1.3925
MY Group (Asia) Limited
FQB10N20LTM
ON/CMD
4570
2.115
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
FQB10N20LTM
ON/SANYO
2786
2.8375
Ande Electronics Co., Limited
FQB10N20LTM
ONSEM
3830
3.56
ATLANTIC TECHNOLOGY LIMITED