Part Number | FQB10N20CTM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 200V 9.5A D2PAK |
Series | QFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 510pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 72W (Tc) |
Rds On (Max) @ Id, Vgs | 360 mOhm @ 4.75A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
FQB10N20CTM
ONSEMICON
1000
0.03
MY Group (Asia) Limited
FQB10N20CTM
ON/ST
4767
0.9125
Acon Electronics Limited
FQB10N20CTM
ON/CMD
10000
1.795
KK Wisdom Limited
FQB10N20CTM
ON/SANYO
29132
2.6775
MASSTOCK ELECTRONICS LIMITED
FQB10N20CTM
ONSEM
27300
3.56
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED