Part Number | FQAF7N90 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 900V 5.2A TO-3PF |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 5.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 59nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2280pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 107W (Tc) |
Rds On (Max) @ Id, Vgs | 1.55 Ohm @ 2.6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3PF |
Package / Case | SC-94 |
Image |
FQAF7N90
ONSEMICON
2125
0.84
MY Group (Asia) Limited
FQAF7N90
ON/ST
7203
1.4375
Shenzhen Ke Zhen Wei Electronics Co. Ltd.
FQAF7N90
ON/CMD
3043
2.035
HK Honbo Electronics Limited
FQAF7N90
ON/SANYO
3961
2.6325
Yingxinyuan INT'L (Group) Limited
FQAF7N90
ONSEM
614
3.23
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED