Part Number | FQAF19N60 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 11.2A TO-3PF |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 11.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 90nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3600pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 120W (Tc) |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 5.6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3PF |
Package / Case | SC-94 |
Image |
FQAF19N60
ONSEMICON
3975
0.74
MY Group (Asia) Limited
FQAF19N60
ON/ST
105
1.2575
ATLANTIC TECHNOLOGY LIMITED
FQAF19N60
ON/CMD
9174
1.775
Finestock Electronics HK Limited
FQAF19N60
ON/SANYO
1348
2.2925
ASSET GREEN TECH, INC
FQAF19N60
ONSEM
719
2.81
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED