Part Number | FQAF10N80 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 800V 6.7A TO-3PF |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 6.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 71nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2700pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 113W (Tc) |
Rds On (Max) @ Id, Vgs | 1.05 Ohm @ 3.35A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3PF |
Package / Case | SC-94 |
Image |
FQAF10N80
ONSEMICON
1996
0.83
CIS Ltd (CHECK IC SOLUTION LIMITED)
FQAF10N80
ON/ST
8520
1.505
MY Group (Asia) Limited
FQAF10N80
ON/CMD
6208
2.18
Finestock Electronics HK Limited
FQAF10N80
ON/SANYO
2820
2.855
ASSET GREEN TECH, INC
FQAF10N80
ONSEM
8679
3.53
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED