Description
DATASHEET 4. Essentially independent of operating temperature typical characteristics. FQA9N90C_F109. FQA9N90C . Symbol. Parameter. Test Conditions. Min. Typ. Max.
Part Number | FQA9N90C |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 900V 9A TO-3P |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 58nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2730pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 280W (Tc) |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 4.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3PN |
Package / Case | TO-3P-3, SC-65-3 |
Image |
Hot Offer
FQA9N90C
ONSEMICON
3150
1.15
N&S Electronic Co., Limited
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2000
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L C Great Exploit Limited
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JI Sheng (HK) Electronics Co., Limited
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YINGDA INTERNATIONAL TECHNOLOGY CO., LIMITED
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Yingxinyuan INT'L (Group) Limited