Part Number | FQA9N90 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 900V 8.6A TO-3P |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 8.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 72nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2700pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 240W (Tc) |
Rds On (Max) @ Id, Vgs | 1.3 Ohm @ 4.3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3PN |
Package / Case | TO-3P-3, SC-65-3 |
Image |
FQA9N90
ONSEMICON
5380
1.38
HK HEQING ELECTRONICS LIMITED
FQA9N90
ON/ST
180
2.9225
WIN AND WIN ELECTRONICS LIMITED
FQA9N90
ON/CMD
279
4.465
Yingxinyuan INT'L (Group) Limited
FQA9N90
ON/SANYO
106500
6.0075
Cicotex Electronics (HK) Limited
FQA9N90_F109
ONSEM
200000
7.55
Shenzhen WTX Capacitor Co., Ltd.