Part Number | FQA9N50 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 500V 9.6A TO-3P |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 9.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1450pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 160W (Tc) |
Rds On (Max) @ Id, Vgs | 730 mOhm @ 4.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3P |
Package / Case | TO-3P-3, SC-65-3 |
Image |
FQA9N50
ONSEMICON
86755
0.04
Bonase Electronics (HK) Co., Limited
FQA9N50
ON/ST
13180
1.29
ATLANTIC TECHNOLOGY LIMITED
FQA9N50
ON/CMD
1000
2.54
MY Group (Asia) Limited
FQA9N50
ON/SANYO
12229
3.79
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
FQA9N50
ONSEM
220
5.04
Hongkong K.L.N Electronic Technology Co., Ltd.