Part Number | FQA8N100C |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 1000V 8A TO-3P |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3220pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 225W (Tc) |
Rds On (Max) @ Id, Vgs | 1.45 Ohm @ 4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3PN |
Package / Case | TO-3P-3, SC-65-3 |
Image |
FQA8N100C
ONSEMICON
8701
1.85
Shenzhen Qiangneng Electronics Co., Ltd.
FQA8N100C
ON/ST
3255
2.7825
SUMMER TECH(HK) LIMITED
FQA8N100C
ON/CMD
7151
3.715
FLOWER GROUP(HK)CO.,LTD
FQA8N100C
ON/SANYO
4943
4.6475
Yingxinyuan INT'L (Group) Limited
FQA8N100C
ONSEM
7263
5.58
Acort Co., Limited