Part Number | FQA6N80 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 800V 6.3A TO-3P |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 6.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 185W (Tc) |
Rds On (Max) @ Id, Vgs | 1.95 Ohm @ 3.15A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3PN |
Package / Case | TO-3P-3, SC-65-3 |
Image |
FQA6N80_F109
ONSEMICON
640
0.14
Ande Electronics Co., Limited
FQA6N80
ON/ST
829
1.29
CIS Ltd (CHECK IC SOLUTION LIMITED)
FQA6N80**
ON/CMD
5148
2.44
N&S Electronic Co., Limited
FQA6N80
ON/SANYO
9096
3.59
N&S Electronic Co., Limited
FQA6N80
ONSEM
372
4.74
Yingxinyuan INT'L (Group) Limited