Part Number | FQA33N10 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 100V 36A TO-3P |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 51nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 163W (Tc) |
Rds On (Max) @ Id, Vgs | 52 mOhm @ 18A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3P |
Package / Case | TO-3P-3, SC-65-3 |
Image |
FQA33N10
ONSEMICON
3859
1.19
HK HEQING ELECTRONICS LIMITED
FQA33N10
ON/ST
7725
1.98
Finestock Electronics HK Limited
FQA33N10
ON/CMD
4106
2.77
Ande Electronics Co., Limited
FQA33N10
ON/SANYO
2783
3.56
CIS Ltd (CHECK IC SOLUTION LIMITED)
FQA33N10
ONSEM
8017
4.35
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED