Part Number | FQA19N60 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 18.5A TO-3P |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 18.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 90nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3600pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 9.3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3PN |
Package / Case | TO-3P-3, SC-65-3 |
Image |
FQA19N60
ONSEMICON
9368
0.86
SUMMER TECH(HK) LIMITED
FQA19N60
ON/ST
3883
1.97
Xinye International Technology Limited
FQA19N60
ON/CMD
7278
3.08
Belt (HK) Electronics Co
FQA19N60
ON/SANYO
8429
4.19
WIN AND WIN ELECTRONICS LIMITED
FQA19N60
ONSEM
5003
5.3
Shenzhen WTX Capacitor Co., Ltd.