Part Number | FQA19N20C |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 200V 21.8A TO-3P |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 21.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1080pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 180W (Tc) |
Rds On (Max) @ Id, Vgs | 170 mOhm @ 10.9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3PN |
Package / Case | TO-3P-3, SC-65-3 |
Image |
FQA19N20C
ONSEMICON
16000
1.29
Finestock Electronics HK Limited
FQA19N20C
ON/ST
290
1.9375
Yingxinyuan INT'L (Group) Limited
FQA19N20C
ON/CMD
42134
2.585
ATLANTIC TECHNOLOGY LIMITED
FQA19N20C
ON/SANYO
20000
3.2325
Redstar Electronic Limited
FQA19N20C**
ONSEM
49800
3.88
Ande Electronics Co., Limited