Part Number | FQA170N06 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 60V 170A TO-3P |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 170A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 290nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 9350pF @ 25V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 375W (Tc) |
Rds On (Max) @ Id, Vgs | 5.6 mOhm @ 85A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3PN |
Package / Case | TO-3P-3, SC-65-3 |
Image |
FQA170N06
ONSEMICON
18133
0.75
HK HEQING ELECTRONICS LIMITED
FQA170N06
ON/ST
12388
1.6175
Ande Electronics Co., Limited
FQA170N06
ON/CMD
6300
2.485
SUMMER TECH(HK) LIMITED
FQA170N06
ON/SANYO
8245
3.3525
CIS Ltd (CHECK IC SOLUTION LIMITED)
FQA170N06
ONSEM
14000
4.22
MY Group (Asia) Limited