Part Number | FJY3011R |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS NPN 200MW SOT523F |
Series | - |
Packaging | |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Resistor - Base (R1) (Ohms) | 22k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | SC-89, SOT-490 |
Supplier Device Package | SOT-523F |
Image |
FJY3011R
ONSEMICON
30000
0.65
HK HEQING ELECTRONICS LIMITED
FJY3011R
ON/ST
36500
1.545
Cicotex Electronics (HK) Limited
FJY3011R
ON/CMD
31000
2.44
CIS Ltd (CHECK IC SOLUTION LIMITED)
FJY3011R
ON/SANYO
3260
3.335
ONSTAR ELECTRONICS CO., LIMITED
FJY3011R
ONSEM
60000
4.23
Yingxinyuan INT'L (Group) Limited