Part Number | FJV3114RMTF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS NPN 200MW SOT23-3 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 (TO-236) |
Image |
FJV3114RMTF
ONSEMICON
7417
0.1
HK HEQING ELECTRONICS LIMITED
FJV3114RMTF
ON/ST
55300
0.8675
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FJV3114RMTF
ON/CMD
14000
1.635
CIS Ltd (CHECK IC SOLUTION LIMITED)
FJV3114RMTF
ON/SANYO
55000
2.4025
Antony Electronic Ltd.
FJV3114RMTF
ONSEM
2000
3.17
Yingxinyuan INT'L (Group) Limited