Part Number | FJV3113RMTF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS NPN 200MW SOT23-3 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 (TO-236) |
Image |
FJV3113RMTF
ONSEMICON
1930
1.54
TERNARY UNION CO., LIMITED
FJV3113RMTF
ON/ST
7944
2.81
ONSTAR ELECTRONICS CO., LIMITED
FJV3113RMTF
ON/CMD
354
4.08
Cicotex Electronics (HK) Limited
FJV3113RMTF
ON/SANYO
3520
5.35
CIS Ltd (CHECK IC SOLUTION LIMITED)
FJV3113RMTF
ONSEM
7663
6.62
Hong Kong Capital Industrial Co.,Ltd