Part Number | FJV3109RMTF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS NPN 200MW SOT23-3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 (TO-236) |
Image |
FJV3109RMTF
ONSEMICON
3000
0.73
Hong Kong Capital Industrial Co.,Ltd
FJV3109RMTF
ON/ST
55300
2.09
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FJV3109RMTF
ON/CMD
5970
3.45
ONSTAR ELECTRONICS CO., LIMITED
FJV3109RMTF
ON/SANYO
3000
4.81
Belt (HK) Electronics Co
FJV3109RMTF
ONSEM
50500
6.17
Cicotex Electronics (HK) Limited