Part Number | FJV3108RMTF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS NPN 200MW SOT23-3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 47k |
Resistor - Emitter Base (R2) (Ohms) | 22k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 (TO-236) |
Image |
FJV3108RMTF
ONSEMICON
36000
1.62
HK HEQING ELECTRONICS LIMITED
FJV3108RMTF
ON/ST
3260
2.475
ONSTAR ELECTRONICS CO., LIMITED
FJV3108RMTF
ON/CMD
3000
3.33
Hong Kong Capital Industrial Co.,Ltd
FJV3108RMTF
ON/SANYO
37750
4.185
Cicotex Electronics (HK) Limited
FJV3108RMTF
ONSEM
3000
5.04
Yingxinyuan INT'L (Group) Limited