Part Number | FJV3106RMTF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS NPN 200MW SOT23-3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 (TO-236) |
Image |
FJV3106RMTF
ONSEMICON
3000
1.09
HK HEQING ELECTRONICS LIMITED
FJV3106RMTF
ON/ST
3000
2.035
Hong Kong Capital Industrial Co.,Ltd
FJV3106RMTF
ON/CMD
35800
2.98
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FJV3106RMTF
ON/SANYO
13000
3.925
N&S Electronic Co., Limited
FJV3106RMTF
ONSEM
8000
4.87
MY Group (Asia) Limited