Part Number | FJV3101RMTF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS NPN 200MW SOT23-3 |
Series | - |
Packaging | |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | 4.7k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 (TO-236) |
Image |
FJV3101RMTF
ONSEMICON
171000
1.29
HK HEQING ELECTRONICS LIMITED
FJV3101RMTF
ON/ST
3000
2.225
Hong Kong Capital Industrial Co.,Ltd
FJV3101RMTF
ON/CMD
55300
3.16
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FJV3101RMTF
ON/SANYO
368000
4.095
Shenzhen WTX Capacitor Co., Ltd.
FJV3101RMTF
ONSEM
1386
5.03
Yingxinyuan INT'L (Group) Limited