Part Number | FJNS3212RBU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS NPN 300MW TO92S |
Series | - |
Packaging | Bulk |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Resistor - Base (R1) (Ohms) | 47k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 300mW |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 Short Body (Formed Leads) |
Supplier Device Package | TO-92S |
Image |
FJNS3212RBU
ONSEMICON
3748
0.82
SUNTOP SEMICONDUCTOR CO., LIMITED
FJNS3212RBU
ON/ST
5121
1.6125
MY Group (Asia) Limited
FJNS3212RBU
ON/CMD
936
2.405
MASSTOCK ELECTRONICS LIMITED
FJNS3201RBU
ON/SANYO
5643
3.1975
SUNTOP SEMICONDUCTOR CO., LIMITED
FJNS3202RTA
ONSEM
9493
3.99
Pacific Century Co.,Ltd