Part Number | FJNS3201RTA |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS NPN 300MW TO92S |
Series | - |
Packaging | Tape & Box (TB) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | 4.7k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 300mW |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 Short Body (Formed Leads) |
Supplier Device Package | TO-92S |
Image |
FJNS3201RTA
ONSEMICON
8000
0.64
SUNTOP SEMICONDUCTOR CO., LIMITED
FJNS3201RTA
ON/ST
8000
1.4575
MY Group (Asia) Limited
FJNS3201RTA
ON/CMD
18000
2.275
MASSTOCK ELECTRONICS LIMITED
FJNS3201RTA
ON/SANYO
348000
3.0925
Hongkong K.L.N Electronic Technology Co., Ltd.
FJNS3201RBU
ONSEM
8000
3.91
SUNTOP SEMICONDUCTOR CO., LIMITED