Part Number | FJN4311RBU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS PNP 300MW TO92-3 |
Series | - |
Packaging | Bulk |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Resistor - Base (R1) (Ohms) | 22k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 300mW |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package | TO-92-3 |
Image |
FJN4311RBU
ONSEMICON
3319
1.75
SUNTOP SEMICONDUCTOR CO., LIMITED
FJN4311RBU
ON/ST
3312
2.4575
MY Group (Asia) Limited
FJN4311RBU
ON/CMD
5743
3.165
MASSTOCK ELECTRONICS LIMITED
FJN4310RBU
ON/SANYO
2979
3.8725
SUNTOP SEMICONDUCTOR CO., LIMITED
FJN4310RBU
ONSEM
2016
4.58
MY Group (Asia) Limited