Description
Oct 4, 2015 absolute maximum ratings are stress ratings only. Values are at TA = 25 C unless otherwise noted. Part Number. Top Mark. Package. Packing Method. FJN4302RTA . R4302. TO-92 3L. Ammo. Symbol. Parameter. Value. Unit. Jan 13, 2017 207-761-6214 jolene.small@fairchildsemi.com. Material Declaration Processing Information. FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FJN4302RTA . TO92-3 (FeLFAuBW) Part Electrical Specifications. Product. Compliance. Status. Polarity. IC. Continuo us (A). V(BR)CEO. Min (V). hFE Min. R1 (k ). R2 (k ). R1/R2. Typ. Vi(off) Max. (V ). Vi(on) Min. (V). Package. Type. FJN4302RTA . Pb-free. Active. PNP. -0.1. -50.
Part Number | FJN4302RTA |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS PNP 300MW TO92-3 |
Series | - |
Packaging | Tape & Box (TB) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 300mW |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package | TO-92-3 |
Image |
FJN4302RTA
ONSEMICON
2000
0.33
C&G Electronics (HK) Co., Ltd
FJN4302RTA
ON/ST
8000
1.6925
MY Group (Asia) Limited
FJN4302RTA
ON/CMD
1000
3.055
Bonase Electronics (HK) Co., Limited
FJN4303R
ON/SANYO
5000
4.4175
Ande Electronics Co., Limited
FJN4303R
ONSEM
5000
5.78
CIS Ltd (CHECK IC SOLUTION LIMITED)