Part Number | FJN3309RTA |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS NPN 300MW TO92-3 |
Series | - |
Packaging | Tape & Box (TB) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 300mW |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package | TO-92-3 |
Image |
FJN3309RTA
ONSEMICON
7791
0.8
MY Group (Asia) Limited
FJN3309RTA
ON/ST
6760
1.685
ONSTAR ELECTRONICS CO., LIMITED
FJN3309RTA
ON/CMD
4216
2.57
Viassion Technology Co., Limited
FJN3309RTA
ON/SANYO
907
3.455
HK Great Sunny Co., Limited
FJN3309RTA
ONSEM
8385
4.34
Ande Electronics Co., Limited