Part Number | FJN3309RBU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS NPN 300MW TO92-3 |
Series | - |
Packaging | Bulk |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 300mW |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package | TO-92-3 |
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FJN3309RBU
ONSEMICON
500
1.52
ONSTAR ELECTRONICS CO., LIMITED
FJN3309RBU
ON/ST
8000
2.3775
MY Group (Asia) Limited
FJN3303FBU
ON/CMD
10550
3.235
Hongkong Rixin International Trading Company
FJN3302RTA
ON/SANYO
20000
4.0925
Far East Electronics Technology Limited
FJN3303BU
ONSEM
9780
4.95
Yu Hong Technologies Limited