Part Number | FJN3306RTA |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS NPN 300MW TO92-3 |
Series | - |
Packaging | Tape & Box (TB) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 300mW |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package | TO-92-3 |
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FJN3306RTA
ONSEMICON
500
1.06
ONSTAR ELECTRONICS CO., LIMITED
FJN3306RTA
ON/ST
8000
2.3725
MY Group (Asia) Limited
FJN3303BU
ON/CMD
9780
3.685
Yu Hong Technologies Limited
FJN3303FBU
ON/SANYO
10550
4.9975
Hongkong Rixin International Trading Company
FJN3302RTA
ONSEM
20000
6.31
Far East Electronics Technology Limited