Description
FJD3076 . Features. Power Amplifier Applications. Low Collector-Emitter Saturation Voltage. Applications. This product is general usage and suitable for FJD3076 . Pb-free. Active. NPN Epitaxial Silicon Transistor. DPAK-3. MMBT2222AM3. AEC. Qualified. Pb-free. Halide free. PPAP. Capable. Active. NPN Bipolar MJD31C. NPN. General Purpose. 100. 100. 5. 3. 15. 10. 50. 3. . 1.2. . . TO 252(DPAK). FJD3076 . NPN. General Purpose. 40. 32. 5. 2. 10. 130. 390. 0.5. 0.5.
Part Number | FJD3076 |
Brand | ON Semiconductor |
Image |
FJD3076
ONSEMICON
1974
0.86
HK HEQING ELECTRONICS LIMITED
FJD3076 MOS()
ON/ST
4474
1.6225
CIS Ltd (CHECK IC SOLUTION LIMITED)
FJD3076
ON/CMD
5000
2.385
Yingxinyuan INT'L (Group) Limited
FJD3076
ON/SANYO
5451
3.1475
Cicotex Electronics (HK) Limited
FJD3076
ONSEM
24474
3.91
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED