Part Number | FJBE2150DTU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | ON Semiconductor |
Description | TRANS NPN 800V 2A D2-PAK-2L |
Series | ESBC |
Packaging | NPN |
Transistor Type | Tube |
Current - Collector (Ic) (Max) | 2A |
Voltage - Collector Emitter Breakdown (Max) | 800V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 330mA, 1A |
Current - Collector Cutoff (Max) | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 400mA, 3V |
Power - Max | 110W |
Frequency - Transition | 5MHz |
Operating Temperature | -55°C ~ 125°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Supplier Device Package | D²ÂPAK (TO-263) |
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FJBE2150DTU
ONSEMICON
15000
0.27
Bonase Electronics (HK) Co., Limited
FJBE2150DTU
ON/ST
20000
1.485
S.E. Components
FJBE2150DTU
ON/CMD
14000
2.7
MY Group (Asia) Limited
FJBE2150DTU
ON/SANYO
20000
3.915
S.E. Components
FJBE2150DTU
ONSEM
14000
5.13
MY Group (Asia) Limited