Part Number | FJ6K01010L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET P-CH 12V 4A WSMINI6 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 10V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 700mW (Ta) |
Rds On (Max) @ Id, Vgs | 34 mOhm @ 1A, 4.5V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | WSMini6-F1-B |
Package / Case | 6-SMD, Flat Leads |
Image |
FJ6K01010L
ONSEMICON
5519
0.6
HK HEQING ELECTRONICS LIMITED
FJ6K01010L
ON/ST
1663
2.0275
CIS Ltd (CHECK IC SOLUTION LIMITED)
FJ6K01010L
ON/CMD
5738
3.455
Yingxinyuan INT'L (Group) Limited
FJ6K01010L
ON/SANYO
7944
4.8825
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
FJ6K01010L
ONSEM
1973
6.31
Cicotex Electronics (HK) Limited