Description
FGA25S125P . TO3PN-3. Jan 08, 2016. 1.0. FSSZ. 5.43465 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy. J-STD-020 MSL Rating. FGA25S125P : 1250V, 25A, Shorted-anode IGBT. For complete documentation, see the data sheet. Using advanced field stop trench and shorted-anode FGA25S125P . Yes. 1250. 232ns. 25A. 0.6. 1.8. 4.5. TO-3P 3L. FGH30S130P. Yes . 1300. 270ns. 30A. 0.3. 1.75. 4.5. TO-247 3L. FGA30S120P. Yes. 1300. 270ns. Mar 13, 2013 FGA25S125P . Yes. 1250. 232. 25 A @ 100 C. 0.60. 1.75. 4.5. TO-3P 3L. Second. FGH30S130P. Yes. 1300. 270. 30 A @ 100 C. 0.30. 1.75. 4.5.
Part Number | FGA25S125P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | ON Semiconductor |
Description | IGBT 1250V 50A 250W TO-3PN |
Series | - |
Packaging | Tube |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 1250V |
Current - Collector (Ic) (Max) | 50A |
Current - Collector Pulsed (Icm) | 75A |
Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 25A |
Power - Max | 250W |
Switching Energy | 1.09mJ (on), 580µJ (off) |
Input Type | Standard |
Gate Charge | 204nC |
Td (on/off) @ 25°C | 24ns/502ns |
Test Condition | 600V, 25A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 |
Supplier Device Package | TO-3PN |
Image |
FGA25S125P
ONSEMICON
220360
1.78
Cinty Int'l (HK) Industry Co., Limited
FGA25S125P
ON/ST
11060
2.74
CIS Ltd (CHECK IC SOLUTION LIMITED)
FGA25S125P
ON/CMD
23791
3.7
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
FGA25S125P
ON/SANYO
1998
4.66
Yingxinyuan INT'L (Group) Limited
FGA25S125P
ONSEM
62
5.62
WIN AND WIN ELECTRONICS LIMITED