Description
L1. Inductor, SMT, 1.0uH, 8.5A, 10milliohms. 0.270 sq. Vishay. IHLP-2525CZ-01. 1. Q1. MOSFET, Dual N-ch, 20-V, 8A, 20milliohm. SO8. Fairchild. FDS6894AZ . L1. SMT, 1.0 H, 8.5 A, 10 m , 0.270 sq. Vishay. IHLP 2525CZ 01. 1 H, 20%. MOSFET. 1. Q1. Dual N-channel, 20 V, 8 A, 20 m , SO8. Siliconix. FDS6894AZ . Nov 16, 2007 FDS6894AZ . Fairchild Semiconductor. May 16, 2008. November 16, 2008. FDV305N_NL. FDV305N. Fairchild Semiconductor. May 16, 2008.
Part Number | FDS6894AZ |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | ON Semiconductor |
Description | MOSFET 2N-CH 20V 8A 8SOIC |
Series | PowerTrench |
Packaging | Tape & Reel (TR) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 8A |
Rds On (Max) @ Id, Vgs | 17 mOhm @ 8A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1455pF @ 10V |
Power - Max | 900mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
FDS6894AZ
ONSEMICON
79999
0.88
HK HEQING ELECTRONICS LIMITED
FDS6894AZ
ON/ST
3998
1.4775
Ysx Tech Co., Limited
FDS6894AZ
ON/CMD
407
2.075
Yingxinyuan INT'L (Group) Limited
FDS6894AZ
ON/SANYO
34729
2.6725
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
FDS6894AZ
ONSEM
65000
3.27
C & I Semiconductors Co., Limited