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Description
Datasheet Jul 1, 2010 The FDS6670AS is designed to replace a single SO-8. MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET 25. Package Marking and Ordering Information. Device Marking. Device. Reel Size. Tape width. Quantity. FDS6670A . FDS6670A . 13. 12mm. 2500 units. FDS6. Jul 14, 2015 Unit Type. FDS6670AS . FDS6670AS . SOIC-8 (CuBW-Gs). Jul 14, 2015. 1.0. SUBCON. 0.090751 g. Each. Manufacturing Process Information. FDS6670AS . SOIC-8 (CuBW-Gs). SUBCON. SUBCON. 0.090751. 1. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. Peak. Temp . FDS6670AS . Fairchild. IRF7821. International Rectifier. Inductor Selection. The inductor value and operating frequency determine the ripple current according to
| Part Number | FDS6670AS |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 30V 13.5A 8SOIC |
| Series | PowerTrench, SyncFET |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 13.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1540pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 13.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image |  |
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